Synthesis of nanoheterostructures: generating prospects for "pure" energy O. Pchelyakov 1, S. Tokmoldin 2 1) Institute of Semiconductor Physics, Siberian.

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Synthesis of nanoheterostructures: generating prospects for "pure" energy O. Pchelyakov 1, S. Tokmoldin 2 1) Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Academgorodok, Novosibirsk, Russia 2) Physical-technical Institute, Almaty, Kazakhstan

OUTLINE Introduction Motivation for Applications of Nanostructures in Photovoltaic and the Example of Ge/Si Nanoheterostructures Molecular Beam Epitaxy of Nanostructures for Photovoltaic Applications - way to high efficiency solar cell Prospects of mutual development of semiconductor vacuum nanotechnologies including space technology

Motivation for Applications of Nanostructures in Photovoltaic and the Example of Ge/Si Nanoheterostructures Heterostructures with germanium nanoclusters in silicon are now regarded as a new class of materials for photovoltaic with the purpose of application in solar cells. Experimental results in this field are very promising as to nanotechnology application in high power efficiency Si-based optoelectronic and photovoltaic.

Record solar cell efficiencies for multijunction concentrator cells and other photovoltaic technologies since 1975, as compiled by the National Renewable Energy Laboratory (NREL). (Courtesy of R. McConnell, NREL) 2008 PROGRESS IN SOLAR CELL EFFICIENCIES 24% Nanotechnology For Solar Cell

The simplified energy-band structure of solar batteries with intermediate band (IPB) [A.Luque and A.Martý, Phys. Rev. Lett., v. 78, No. 26, 1997] Photovoltaics for the 21st century Kin Man Yu and Wladek Walukiewicz Berkeley Lab 2004 SELF-ORDERED Ge/Si QUANTUM DOT INTERMEDIATE BAND PHOTOVOLTAIC SOLAR CELLS A. M. Kechiantz, K.W. Sun, H.M. Kechiyants, L. M. Kocharyan. Int. Scientific Journal for Alternative Energy and Ecology ISJAEE 12(32) (2005) Cathode Semiconductor with IPB Cathode FC E L IB E G E H 1 2 FI FV e VB V CB p + n + E E E 63% !!!

STM images of Si(111)-7×7 surface on initial growth stages of Ge nanoclusters а) 0.02 БС 7х7 нм б) 0.17 БС 14х14 нм в) 0.4 БС 23х23 нм O.P. Pchelyakov, A.I. Nikiforov, B.Z. Olshanetsky, S.A. Teys, A.I. Yakimov and S.I. Chikichev, MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics, Journal of Physics and Chemistry of Solids (2007)

Perspective nanostructures on silicon for photo-electro-generators with Ge quantum dots in Si MgF 2 /ZnS Ag контакт Ge quantum dots in i-Si (50 layers) Al contact n- Si: 10нм 1x10 19 см -3 (Sb) p + Si substrate р - Si buffer Karl Brunner

Quantum efficiency of solar cells With quantum dots Without quantum dots

Thermophotovoltaic conversion, with concentrator optics and narrow pass filter

Design of thermophotovoltaic system

Point Back Side Contacts Solar Cells

Back-point-contact Si solar cell

Front surface of Si solar cells (3 float-zone Si wafer)

Comparison with experimental I-V characteristic R.M.Swanson, Point-Contact Solar Cells: Modelling and Experiment, Solar Cell 17 (1986),

The cutting and stuck together solar battery

Installation Katun

The plan of arrangement of MBE installation at the international space station

PHYSICAL-TECHNICAL INSTITUTE OF ALMATY KAZAKHSTAN

Саммит в Новосибирске 2007 Соглашение по организации научно- образовательного инновационного партнерства «Нанотехнология» Международная нанотехнологическая лаборатория распределённого типа Россия - Казахстан - США Физико-технический институт, Алматы, Казахстан Проект Сауле производство высокоэффективных солнечных энергоустановок Проект Нанофабрика Россия - Казахстан технологическая и аналитическая база наноиндустрии будущего Проект Аметист Россия - США - Казахстан создание орбитальной минифабрики по производству наногетероструктур Институт физики полупроводников СО РАН, РКК «Энергия» им. С.П. Королева, Центр перспективных материалов университета г. Хьюстон, США Научнообразовательный центр НОЦ Перспективные материалы и технологии - Санкт-Петербургский Физико-технологический институт, Научно-образовательный центр РАН Ульбинский металлургический завод, Казахстан Нанотехнологическая компания НТ-МДТ г. Зеленоград, Москва Российские и Казахстанские университеты, НИИ, компании

Possible configuration of installation "Shield" Blinov V.V., Zvorykin, L.L., Ivanov, A.I., Ignatyev, А., Mashanov, V.I, PreobrazhenskiyV.V., Pcheljakov O. P., Sokolov L.V. Patent RF on The device for MBE growth of nanomaterials in an outer space , 03.04/ , 03.04/2009

Rockets Space Corporation Energy NT-MDT Company AFM - microscope Space MBE system International Space Station ISP SB RAS PATENT , Priority

Space Resources for Experiments «ОКА-Т» 1 ( ) and 2 ( ) «Wozwrat-ISS» (2014г.) 1,5 kw, 250 kg, 1-2 years, Height of an orbit in apogee km International Space Stations Stations Central Research Institute of Engineering Industry

Prospects for the international cooperation New generation of nanoelectronics, nanophotonics and photovoltaic Joint investigation of fundamental processes on clean surface of semiconductors during MBE, CBE and CVD growth of nanostructures including space vacuum technology Joint investigation of fundamental processes on clean surface of semiconductors during MBE, CBE and CVD growth of nanostructures including space vacuum technology Joint experimental studies, theoretical modeling and analyses of electron and optical properties of nanostructures Joint experimental studies, theoretical modeling and analyses of electron and optical properties of nanostructures Joint research, development and production of new types of nanoscale heterostructures for photodetectors and phototransistors, for research and industrial application in night vision systems and in high efficiency solar cell Joint research, development and production of new types of nanoscale heterostructures for photodetectors and phototransistors, for research and industrial application in night vision systems and in high efficiency solar cell Joint development and production of optimized nanotechnological equipment for MBE, CBE, CVD and so on Joint development and production of optimized nanotechnological equipment for MBE, CBE, CVD and so on Mutual contacts, scientific conferences and workshops Mutual contacts, scientific conferences and workshops

Thank you for attention for attention